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1. product pro?le 1.1 general description npn high-voltage low v cesat breakthrough in small signal (biss) transistor in a small sot23 (to-236ab) surface-mounted device (smd) plastic package. pnp complement: pbhv9115t. 1.2 features n high voltage n low collector-emitter saturation voltage v cesat n high collector current capability i c and i cm n high collector current gain (h fe ) at high i c n aec-q101 quali?ed n small smd plastic package 1.3 applications n led driver for led chain module n lcd backlighting n high intensity discharge (hid) front lighting n automotive motor management n hook switch for wired telecom n switch mode power supply (smps) 1.4 quick reference data pbhv8115t 150 v, 1 a npn high-voltage low v cesat (biss) transistor rev. 02 9 december 2008 product data sheet table 1. quick reference data symbol parameter conditions min typ max unit v ceo collector-emitter voltage open base - - 150 v i c collector current - - 1 a h fe dc current gain v ce =10v; i c =50ma 100 250 -
pbhv8115t_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 9 december 2008 2 of 12 nxp semiconductors pbhv8115t 150 v, 1 a npn high-voltage low v cesat (biss) transistor 2. pinning information 3. ordering information 4. marking [1] * = -: made in hong kong * = p: made in hong kong * = t: made in malaysia * = w: made in china table 2. pinning pin description simpli?ed outline graphic symbol 1 base 2 emitter 3 collector 12 3 sym021 3 2 1 table 3. ordering information type number package name description version pbhv8115t - plastic surface-mounted package; 3 leads sot23 table 4. marking codes type number marking code [1] pbhv8115t w6*
pbhv8115t_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 9 december 2008 3 of 12 nxp semiconductors pbhv8115t 150 v, 1 a npn high-voltage low v cesat (biss) transistor 5. limiting values [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated and standard footprint. table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cbo collector-base voltage open emitter - 400 v v ceo collector-emitter voltage open base - 150 v v ebo emitter-base voltage open collector - 6 v i c collector current - 1 a i cm peak collector current single pulse; t p 1ms -2a i bm peak base current single pulse; t p 1ms - 400 ma p tot total power dissipation t amb 25 c [1] - 300 mw t j junction temperature - 150 c t amb ambient temperature - 55 +150 c t stg storage temperature - 65 +150 c fr4 pcb, standard footprint fig 1. power derating curve t amb ( c) - 75 175 125 25 75 - 25 006aab150 200 100 300 400 p tot (mw) 0
pbhv8115t_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 9 december 2008 4 of 12 nxp semiconductors pbhv8115t 150 v, 1 a npn high-voltage low v cesat (biss) transistor 6. thermal characteristics [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. table 6. thermal characteristics symbol parameter conditions min typ max unit r th(j-a) thermal resistance from junction to ambient in free air [1] - - 417 k/w r th(j-sp) thermal resistance from junction to solder point --70k/w fr4 pcb, standard footprint fig 2. transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab151 10 1 10 2 10 3 z th(j-a) (k/w) 10 - 1 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0
pbhv8115t_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 9 december 2008 5 of 12 nxp semiconductors pbhv8115t 150 v, 1 a npn high-voltage low v cesat (biss) transistor 7. characteristics [1] pulse test: t p 300 m s; d 0.02. table 7. characteristics t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit i cbo collector-base cut-off current v cb = 120 v; i e = 0 a - - 100 na v cb = 120 v; i e =0a; t j = 150 c --10 m a i ces collector-emitter cut-off current v ce = 120 v; v be = 0 v - - 100 na i ebo emitter-base cut-off current v eb =4v; i c = 0 a - - 100 na h fe dc current gain v ce =10v i c = 50 ma 100 250 - i c = 100 ma 100 250 - i c = 0.5 a [1] 50 160 - i c =1a [1] 10 30 - v cesat collector-emitter saturation voltage i c = 100 ma; i b = 10 ma - 40 60 mv i c = 100 ma; i b = 20 ma - 33 50 mv i c = 1 a; i b = 200 ma [1] - 225 350 mv v besat base-emitter saturation voltage i c = 1 a; i b = 200 ma [1] - 1.1 1.2 v f t transition frequency v ce =10v; i e =10ma; f = 100 mhz - 30 - mhz c c collector capacitance v cb =20v; i e =i e =0a; f=1mhz - 5.7 - pf c e emitter capacitance v eb = 0.5 v; i c =i c =0a; f=1mhz - 150 - pf t d delay time v cc =6v; i c = 0.5 a; i bon = 0.1 a; i boff = - 0.1 a -7-ns t r rise time - 565 - ns t on turn-on time - 572 - ns t s storage time - 1530 - ns t f fall time - 700 - ns t off turn-off time - 2230 - ns
pbhv8115t_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 9 december 2008 6 of 12 nxp semiconductors pbhv8115t 150 v, 1 a npn high-voltage low v cesat (biss) transistor v ce =10v (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c t amb =25 c fig 3. dc current gain as a function of collector current; typical values fig 4. collector current as a function of collector-emitter voltage; typical values v ce =10v (1) t amb = - 55 c (2) t amb =25 c (3) t amb = 100 c i c /i b =5 (1) t amb = - 55 c (2) t amb =25 c (3) t amb = 100 c fig 5. base-emitter voltage as a function of collector current; typical values fig 6. base-emitter saturation voltage as a function of collector current; typical values 006aab158 200 300 100 400 500 h fe 0 i c (ma) 10 - 1 10 4 10 3 110 2 10 (2) (1) (3) v ce (v) 05 4 23 1 006aab159 0.8 1.2 0.4 1.6 2.0 i c (a) 0 270 240 210 180 150 120 i b (ma) = 300 90 60 30 006aab160 0.4 0.8 1.2 v be (v) 0 i c (ma) 10 - 1 10 4 10 3 110 2 10 (2) (1) (3) 006aab161 0.5 0.9 1.3 v besat (v) 0.1 i c (ma) 10 - 1 10 4 10 3 110 2 10 (2) (1) (3)
pbhv8115t_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 9 december 2008 7 of 12 nxp semiconductors pbhv8115t 150 v, 1 a npn high-voltage low v cesat (biss) transistor i c /i b =5 (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c t amb =25 c (1) i c /i b =20 (2) i c /i b =10 (3) i c /i b =5 fig 7. collector-emitter saturation voltage as a function of collector current; typical values fig 8. collector-emitter saturation voltage as a function of collector current; typical values i c /i b =5 (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c t amb =25 c (1) i c /i b =20 (2) i c /i b =10 (3) i c /i b =5 fig 9. collector-emitter saturation resistance as a function of collector current; typical values fig 10. collector-emitter saturation resistance as a function of collector current; typical values 006aab162 10 - 1 10 - 2 1 v cesat (v) 10 - 3 i c (ma) 10 - 1 10 4 10 3 110 2 10 (1) (2) (3) 006aab163 i c (ma) 10 - 1 10 4 10 3 110 2 10 10 - 2 10 - 1 1 10 v cesat (v) 10 - 3 (2) (1) (3) 006aab164 i c (ma) 10 - 1 10 4 10 3 110 2 10 1 10 10 2 10 3 r cesat ( w ) 10 - 1 (1) (2) (3) 006aab165 i c (ma) 10 - 1 10 4 10 3 110 2 10 1 10 10 2 10 3 r cesat ( w ) 10 - 1 (1) (2) (3)
pbhv8115t_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 9 december 2008 8 of 12 nxp semiconductors pbhv8115t 150 v, 1 a npn high-voltage low v cesat (biss) transistor 8. test information 8.1 quality information this product has been quali?ed in accordance with the automotive electronics council (aec) standard q101 - stress test quali?cation for discrete semiconductors , and is suitable for use in automotive applications. 9. package outline 10. packing information [1] for further information and the availability of packing methods, see section 14 . fig 11. test circuit for switching times r c r2 r1 dut mlb826 v o r b (probe) 450 w (probe) 450 w oscilloscope oscilloscope v bb v i v cc fig 12. package outline sot23 (to-236ab) 04-11-04 dimensions in mm 0.45 0.15 1.9 1.1 0.9 3.0 2.8 2.5 2.1 1.4 1.2 0.48 0.38 0.15 0.09 12 3 table 8. packing methods the indicated -xxx are the last three digits of the 12nc ordering code. [1] type number package description packing quantity 3000 10000 pbhv8115t sot23 4 mm pitch, 8 mm tape and reel -215 -235
pbhv8115t_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 9 december 2008 9 of 12 nxp semiconductors pbhv8115t 150 v, 1 a npn high-voltage low v cesat (biss) transistor 11. soldering fig 13. re?ow soldering footprint sot23 (to-236ab) fig 14. wave soldering footprint sot23 (to-236ab) solder lands solder resist occupied area solder paste sot023_fr 0.5 (3 ) 0.6 (3 ) 0.6 (3 ) 0.7 (3 ) 3 1 3.3 2.9 1.7 1.9 2 dimensions in mm solder lands solder resist occupied area preferred transport direction during soldering sot023_fw 2.8 4.5 1.4 4.6 1.4 (2 ) 1.2 (2 ) 2.2 2.6 dimensions in mm
pbhv8115t_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 9 december 2008 10 of 12 nxp semiconductors pbhv8115t 150 v, 1 a npn high-voltage low v cesat (biss) transistor 12. revision history table 9. revision history document id release date data sheet status change notice supersedes pbhv8115t_2 20081209 product data sheet - pbhv8115t_1 modi?cations: ? t ab le 5 : i bm maximum value changed from 100 ma to 400 ma ? figure 4 : amended ? section 13 legal inf or mation : updated pbhv8115t_1 20080204 product data sheet - -
pbhv8115t_2 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 02 9 december 2008 11 of 12 nxp semiconductors pbhv8115t 150 v, 1 a npn high-voltage low v cesat (biss) transistor 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 13.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 13.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. quick reference data the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 14. contact information for more information, please visit: http://www .nxp.com for sales of?ce addresses, please send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors pbhv8115t 150 v, 1 a npn high-voltage low v cesat (biss) transistor ? nxp b.v. 2008. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 9 december 2008 document identifier: pbhv8115t_2 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 15. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 4 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 8.1 quality information . . . . . . . . . . . . . . . . . . . . . . 8 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 10 packing information. . . . . . . . . . . . . . . . . . . . . . 8 11 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 11 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 13.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 14 contact information. . . . . . . . . . . . . . . . . . . . . 11 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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